File:Analysis of proton radiation effects on gallium nitride high electron mobility transistors (IA analysisofproton1094552977).pdf
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Summary[edit]
Analysis of proton radiation effects on gallium nitride high electron mobility transistors
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| Author |
Augustine, Robert T. |
| Title |
Analysis of proton radiation effects on gallium nitride high electron mobility transistors |
| Publisher |
Monterey, California: Naval Postgraduate School |
| Description |
In this work, a physics-based simulation of non-ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor was created. Based on physical results of 2.0-MeV protons irradiation to fluence levels of 6 1014 protons cm2, the simulation was tuned to match electron mobility n and then compared to threshold voltage Vth on state resistance Ron and transconductance gm. A Monte Carlo simulator was used to model two particle interactions utilizing the Kinchin and Pease model. The model was developed in Silvaco ATLAS, but the Athena and Victory Stress modules were also utilized. After comparison of changing characteristics between the model and the physical device at 2.0-MeV proton irradiation, predictions were made for 5.0, 10.0, 20.0 and 40.0-MeV proton irradiation. The model generally overpredicted damage in the lattice when compared to the physical results seen in prior work. Subjects: gallium nitride; aluminum gallium nitride; high electron mobility transistor; electronics; 2 MeV proton irradiation; radiation effects |
| Language | English |
| Publication date | March 2017 |
| Current location |
IA Collections: navalpostgraduateschoollibrary; fedlink |
| Accession number |
analysisofproton1094552977 |
| Source | |
| Permission (Reusing this file) |
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States. |
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This work is in the public domain in the United States because it is a work prepared by an officer or employee of the United States Government as part of that person’s official duties under the terms of Title 17, Chapter 1, Section 105 of the US Code.
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| This file has been identified as being free of known restrictions under copyright law, including all related and neighboring rights. | ||
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| current | 08:31, 14 July 2020 |  | 1,275 × 1,650, 88 pages (9.76 MB) | Fæ (talk | contribs) | FEDLINK - United States Federal Collection analysisofproton1094552977 (User talk:Fæ/IA books#Fork8) (batch 1993-2020 #6641) |
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