Category:Extreme ultraviolet lithography
Jump to navigation
Jump to search
a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm.  Extreme Ultra-violet (EUV) technology with reflection masks permits lithography of 45nm features (source: Nanocomputers and Swarm Intelligence, Jean-Baptiste Waldner, ISTE, London, 2007) | |||||
| Upload media | |||||
| Instance of |
| ||||
|---|---|---|---|---|---|
| Facet of |
| ||||
| Has use | |||||
| |||||
 | |||||
Media in category "Extreme ultraviolet lithography"
The following 101 files are in this category, out of 101 total.
-
10000 EUV photon dose.png 1,048 × 637; 135 KB
-
10nm metal layer pattern shift through focus.png 669 × 245; 10 KB
-
16 nm 2-bar EUV asymmetry.png 638 × 574; 22 KB
-
16 nm pattern shift with EUV SMO.png 515 × 267; 10 KB
-
16 nm space across pitch vs EUV absorber thickness.png 450 × 255; 49 KB
-
18 nm two-bar EUV threshold vs focus.png 514 × 367; 80 KB
-
2-bar in 2D layout.png 456 × 313; 8 KB
-
20 nm width stochastic failure probability.png 480 × 288; 10 KB
-
22 nm pitch EUV cuts.png 421 × 316; 7 KB
-
22 nm two-bar vs EUV absorber thickness.png 559 × 345; 27 KB
-
30 nm half-pitch EUV shot noise.png 824 × 555; 152 KB
-
36 nm pitch stochastic failures.png 1,248 × 595; 228 KB
-
64 nm pitch EUV shot noise.png 142 × 138; 25 KB
-
6s EUV blur vs linewidth.png 540 × 284; 13 KB
-
7 nm node EUV OPC.png 328 × 269; 16 KB
-
7nm EUV needs LELE.png 466 × 462; 31 KB
-
8 nm hp EUV polarization.PNG 621 × 408; 15 KB
-
80 eV electron blur in EUV Resist.png 480 × 284; 8 KB
-
9 nm half-pitch EUV cuts.png 482 × 269; 8 KB
-
Aerial image of dense lines vs. half-pitch (EUV).png 672 × 430; 18 KB
-
Apodization by EUV multilayer.png 739 × 618; 35 KB
-
ArFi vs EUV multipatterning.png 757 × 349; 17 KB
-
ASML 2014 EUV tool roadmap.png 859 × 435; 192 KB
-
ASML EUV Throughput vs Source Power.png 481 × 289; 8 KB
-
ASML EUVL blurred NILS.PNG 803 × 546; 19 KB
-
Die difference across EUV slit.png 362 × 242; 7 KB
-
Difficulty of EUV Corrections for Tilted Patterns.png 968 × 538; 81 KB
-
Dose dependence of EUV shot noise.png 540 × 284; 13 KB
-
Electron penetration depths in EUV photoresists.png 433 × 398; 29 KB
-
Electrons per EUV photon.PNG 628 × 411; 14 KB
-
EUV 2014 TPT.png 919 × 424; 322 KB
-
EUV 3s shot noise.png 480 × 289; 10 KB
-
EUV angles of incidence.png 543 × 293; 17 KB
-
EUV AOI delta.png 485 × 311; 17 KB
-
EUV Best Focus vs Pitch.png 907 × 581; 258 KB
-
EUV collector loss.png 1,205 × 481; 121 KB
-
EUV defect edge extension.JPG 416 × 318; 21 KB
-
EUV Defect Printability.png 935 × 749; 84 KB
-
EUV demagnification change effect on field.png 347 × 192; 96 KB
-
EUV dipole orientation across slit.png 508 × 383; 14 KB
-
EUV dose sensitivity vs dose.png 627 × 358; 127 KB
-
EUV dose to print contacts.png 481 × 288; 10 KB
-
EUV first order reflectivity (normalized).png 619 × 554; 16 KB
-
EUV H-V bias vs half-pitch.png 483 × 295; 9 KB
-
EUV mask blank - ANAB treated.png 372 × 404; 167 KB
-
EUV mask blank - as polished.png 347 × 370; 216 KB
-
EUV mask blank - untreated.png 449 × 434; 244 KB
-
EUV mask border effect.png 1,272 × 412; 296 KB
-
EUV mask defect printability.png 525 × 264; 25 KB
-
EUV mask defocus image shift.png 212 × 198; 4 KB
-
EUV mask shadow.PNG 455 × 443; 8 KB
-
EUV mask slope effect.png 480 × 289; 9 KB
-
EUV multilayer reflectivity vs angle and polarization.png 582 × 420; 20 KB
-
EUV multilayer reflectivity.png 603 × 443; 24 KB
-
EUV nontelecentricity.PNG 440 × 524; 11 KB
-
EUV OAI.PNG 566 × 345; 11 KB
-
EUV pattern placement error.png 481 × 266; 10 KB
-
EUV pattern shift thru-pitch and thru-focus.png 457 × 350; 14 KB
-
EUV pattern shift vs focus.png 460 × 288; 9 KB
-
EUV pattern shift vs mask focus.png 481 × 289; 10 KB
-
EUV pattern shift vs. focus for different pitches at NA=0.35.png 380 × 258; 49 KB
-
EUV pattern shift vs. half-pitch.png 481 × 289; 12 KB
-
EUV phase defect scatter.JPG 456 × 317; 25 KB
-
EUV Phase Defect Sensitivity.png 636 × 513; 30 KB
-
EUV photoelectron energy deposition distribution.PNG 677 × 530; 16 KB
-
EUV photoelectrons and secondaries (vector).svg 249 × 153; 6 KB
-
EUV photoelectrons and secondaries.jpeg 642 × 514; 27 KB
-
EUV quadrupole nontelecentricity.png 566 × 455; 11 KB
-
EUV resist sensitivity to OOB radiation.png 880 × 759; 58 KB
-
EUV resist shot noise.png 801 × 654; 34 KB
-
EUV secondary electron blur.PNG 481 × 290; 19 KB
-
EUV Shadowing Effect.png 590 × 373; 26 KB
-
EUV shot noise dose range vs. diameter.png 481 × 290; 12 KB
-
EUV shot noise dose vs feature size.png 637 × 283; 13 KB
-
EUV shot noise range vs diameter.png 481 × 299; 13 KB
-
EUV SP vs 193i DDP.PNG 621 × 366; 10 KB
-
EUV stochastic aerial image.png 1,045 × 469; 36 KB
-
EUV T2T scaling.png 480 × 316; 10 KB
-
EUV Throughput vs Source Power.png 601 × 289; 18 KB
-
EUV Tip-to-Tip.png 697 × 549; 28 KB
-
EUV TPT vs dose (125W and 250W).png 480 × 295; 10 KB
-
EUV wafers per day.png 717 × 520; 204 KB
-
EUVL in-plane resolution degradation.PNG 566 × 345; 11 KB
-
EUVL phase defect.JPG 449 × 460; 35 KB
-
Extreme ultraviolet lithography tool.jpg 713 × 605; 80 KB
-
High-NA EUV.png 708 × 349; 91 KB
-
Increasing litho steps for advanced nodes.png 1,271 × 462; 168 KB
-
LCDU vs EUV dose.png 669 × 397; 19 KB
-
Lithographie EUV.jpg 422 × 417; 51 KB
-
LitRo1.jpg 577 × 373; 34 KB
-
OPC for 16 nm EUV.png 720 × 713; 14 KB
-
OPC for EUV at 22 nm.png 368 × 350; 7 KB
-
Reflectivity angular spectrum at different wavelengths.png 568 × 311; 28 KB
-
Ring field illumination uniformity.png 471 × 478; 16 KB
-
Scaling trend of EUV.png 700 × 312; 8 KB
-
Shadowing effect across EUV slit.png 644 × 350; 68 KB
-
Spectrum of lithography lights.PNG 1,150 × 350; 104 KB
-
Stochastic dose distribution.png 542 × 290; 10 KB
-
Tip to tip gap CD vs EUV dose.png 510 × 290; 25 KB
-
Unpolarized EUV linewidth vs pitch.PNG 850 × 523; 23 KB
-
Unpolarized EUV vs TE.png 481 × 356; 21 KB
.png)
.png)
.svg)
.png)
