File:Experimental-investigation-and-numerical-modelling-of-photocurrent-oscillations-in-lattice-matched-1556-276X-9-84-S1.ogv
Experimental-investigation-and-numerical-modelling-of-photocurrent-oscillations-in-lattice-matched-1556-276X-9-84-S1.ogv (Ogg multiplexed audio/video file, Theora/Vorbis, length 2 min 37 s, 768 × 576 pixels, 360 kbps overall, file size: 6.72 MB)
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[edit]DescriptionExperimental-investigation-and-numerical-modelling-of-photocurrent-oscillations-in-lattice-matched-1556-276X-9-84-S1.ogv |
English: The video shows the modelling results achieved using Simwindows32 for sample AsN3134. Four graphs are constantly updated as the applied voltage is swept from 1 to −5 V. The x-axis represents the distance from the top of the device, measured in μm. Precisely: top left, evolution of the band diagram, measured in eV, the green and red lines are the hole and electron Fermi levels, respectively; top right, total recombination rate, this is the recombination rate minus the generation rate in the units of cm−3 s−1; bottom left, total electron (blue) and hole (red) concentrations in the units of cm-3; bottom right, charge distribution in the units of C/cm3. |
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Source | Video file from Royall B, Khalil H, Mazzucato S, Erol A, Balkan N (2014). "Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes". Nanoscale Research Letters. DOI:10.1186/1556-276X-9-84. PMID 24548551. PMC: 3933184. | ||
Author | Royall B, Khalil H, Mazzucato S, Erol A, Balkan N | ||
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This file is licensed under the Creative Commons Attribution 2.0 Generic license.
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 23:44, 2 November 2016 | 2 min 37 s, 768 × 576 (6.72 MB) | Open Access Media Importer Bot (talk | contribs) | Automatically uploaded media file from Open Access source. Please report problems or suggestions here. |
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Short title | Additional file 1 |
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Author | Royall B, Khalil H, Mazzucato S, Erol A, Balkan N |
Usage terms | http://creativecommons.org/licenses/by/2.0/ |
Image title | The video shows the modelling results achieved using Simwindows32 for sample AsN3134. Four graphs are constantly updated as the applied voltage is swept from 1 to −5 V. The x-axis represents the distance from the top of the device, measured in μm. Precisely: top left, evolution of the band diagram, measured in eV, the green and red lines are the hole and electron Fermi levels, respectively; top right, total recombination rate, this is the recombination rate minus the generation rate in the units of cm−3 s−1; bottom left, total electron (blue) and hole (red) concentrations in the units of cm-3; bottom right, charge distribution in the units of C/cm3. |
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Language | English |