File talk:200 nm poly pitch aerial.JPG

Summary

This is the top-down aerial image of a 200 nm pitch gate line pattern formed with an alternating phase-shift mask, where the black area indicates where the intensity is below the threshold for exposing photoresist on a 193 nm 0.93 NA lithography tool. Since this represents an idealized case, purely coherent illumination has been assumed. For simplification, the polarization effect has been neglected in this image as well. The waviness observed in the linewidth is due to the effect of coherent illumination when the image is not a pure line but is bounded on top and bottom. Guiding light 21:03, 1 November 2007 (UTC)

Notes

The image is actually part of a repeating pattern, formed with an alternating phase shift mask where the 0 degree and 180 degree regions alternate in both x and y. The image repeats itself every 200 nm in x and 1000 nm in y. If the image were a pure line extending infinitely in y direction, there would be no waviness seen. Guiding light 21:20, 1 November 2007 (UTC)

[Forwarded from en:File talk:200 nm poly pitch aerial.JPG by Athaenara (talk) 00:48, 1 September 2011 (UTC)]