File:IvsV IGBT.png

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Description Static characteristic of a imaginary Insulated Gate Bipolar Transistor (IGBT)
Date
Source own work, loosely based on model in "Power semiconductor devices" by B. J. Baliga, ISBN 0-534-94098-6
Author Cyril BUTTAY
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attribution share alike
This file is licensed under the Creative Commons Attribution-Share Alike 2.5 Generic, 2.0 Generic and 1.0 Generic license.
You are free:
  • to share – to copy, distribute and transmit the work
  • to remix – to adapt the work
Under the following conditions:
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This plot was created with Gnuplot.

-V{_{th}}=7 V' at 9.8,47 right

set label 4 '6 V' at 9.8,37.5 right set label 5 '5 V' at 9.8,26.5 right set label 6 '4 V' at 9.8,17.4 right set label 7 '3 V' at 9.8,10.5 right set label 8 '2 V' at 9.8,5.5 right set label 9 '1 V' at 9.8,2.5 right

  1. The model is basically that of a mosfet, with a diode in series
  2. Drain current in linear region

linear(vds,vgsvth)=2*vgsvth*vds-vds**2

  1. Drain current in saturation region

saturation(vds,vgsvth)=vgsvth**2

  1. Drain current

draincurrent(vds,vgsvth)=(vds>vgsvth?saturation(vds,vgsvth):linear(vds,vgsvth))

  1. limit between saturation and linear regions

limit(vds)=vds**2

  1. diode forward voltage:

Vf(t,vgsvth)=2*0.026*log(draincurrent(t,vgsvth)/10e-8)

set output "IvsV_IGBT.eps" set parametric set sample 2000

  1. this is totally non physical: we calculate the current in the drain of the mosfet,
  2. then use this value to calculate the voltage drop in the diode, and then plot Vf+voltage
  3. on the x-axis, and the current on the y-axis. Then, I divide the voltage across the MOSFET
  4. by an arbitrary factor (4) to get a steeper curve.

plot [0:40 ][0:10][0:50] Vf(t,1)+t/4,draincurrent(t,1) ls 1 title ,\

	Vf(t,2)+t/4,draincurrent(t,2) ls 1 title ,\
	Vf(t,3)+t/4,draincurrent(t,3) ls 1 title ,\

Vf(t,4)+t/4,draincurrent(t,4) ls 1 title ,\

	Vf(t,5)+t/4,draincurrent(t,5) ls 1 title ,\
	Vf(t,6)+t/4,draincurrent(t,6) ls 1 title ,\
	Vf(t,7)+t/4,draincurrent(t,7) ls 1 title 

}}

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Date/TimeThumbnailDimensionsUserComment
current22:13, 28 June 2006Thumbnail for version as of 22:13, 28 June 20061,500 × 1,050 (30 KB)CyrilB~commonswiki (talk | contribs){{Information |Description=Static characteristic of a imaginary Insulated Gate Bipolar Transistor (IGBT) |Source=own work, loosely based on model in "Power semiconductor devices" by B. J. Baliga, ISBN 0-534-94098-6 |Date=28/06/2006 |Author=Cyril BUTTAY |P

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