File:1x nm hp double patterned cuts.png
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1x_nm_hp_double_patterned_cuts.png (360 × 485 pixels, file size: 10 KB, MIME type: image/png)
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Description1x nm hp double patterned cuts.png |
English: Cut locations for 13-18 nm half-pitch using ArF immersion lithography. Based on Figure 9 of X. Liu et al., "EUV source-mask optimization for 7 nm node and beyond", Proc. SPIE vol 9048, 90480Q (2014). Here two cut exposures using ArF immersion are used, but with EUV a single cut exposure should be sufficient. Cost is still dependent on throughput and source availability, so the double patterning cut technique is still more readily used. |
Date | |
Source | Excel drawing |
Author | Guiding light |
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License.http://www.gnu.org/copyleft/fdl.htmlGFDLGNU Free Documentation Licensetruetrue |
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2014-09-22 12:00 | 360×485× (9952 bytes) | Guiding light | Uploading a self-made file using [[Wikipedia:File_Upload_Wizard|File Upload Wizard]] |
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current | 10:10, 28 February 2016 | 360 × 485 (10 KB) | FastilyClone (talk | contribs) | Transferred from enwp |
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