File:10nm node mt1 ppe vs pitch.png

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10nm_node_mt1_ppe_vs_pitch.png ‎(674 × 324 pixels, file size: 11 KB, MIME type: image/png)

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Description For a 10nm node metal layer, a linewidth of 24 nm and pitches from 48 nm upwards are expected. In addition, power lines needs to be wider (72 nm in this case). Assuming annular illumination (0.2/0.65) and 0.33 NA, even with full OPC correction, there is still residual local pattern placement error (relative to the power line) due to wafer defocus that is dependent on metal pitch. The slit position is fixed. Including all slit positions would lead to around 0.75 nm x-displacement and 1.5 nm y-placement worst-case error within the 80 nm wafer focus window. Ref.: M. Sugawara et al., Proc. SPIE 9048, 90480V (2014).
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Source Excel
Author Guiding light

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current21:33, 11 May 2018Thumbnail for version as of 21:33, 11 May 2018674 × 324 (11 KB)Willy1018 (talk | contribs)Transferred from en.wikipedia (MTC!) (1.1.0)

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