File:Surface MOCVD films defects.jpg
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![File:Surface MOCVD films defects.jpg](https://upload.wikimedia.org/wikipedia/commons/thumb/2/23/Surface_MOCVD_films_defects.jpg/800px-Surface_MOCVD_films_defects.jpg?20171212103306)
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[edit]DescriptionSurface MOCVD films defects.jpg |
English: During the thin film deposition by MOCVD it is possible to form a film with small lattice constant on film with big one. In this case upper film will face tensile stress and will seek a way to get rid of it. Some ways of making it is: to growth not as a single sheet, but as a small sheets, to form cracks and holes. This image shows all kind of ways nitride film used to relieve stress and not-to-become a heterostructure for High Electron Mobility Transistor. The central part takes the form of a hexagon in accordance with the structure of the unit cell of the material. |
Date | |
Source | Own work |
Author | Evavilova |
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This image was uploaded as part of Wiki Science Competition 2017. |
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 10:33, 12 December 2017 | ![]() | 2,560 × 1,920 (418 KB) | Evavilova (talk | contribs) | User created page with UploadWizard |
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Camera manufacturer | NIKON |
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Camera model | DS-Fi1-L2 |
Exposure time | 1/90 sec (0.011111111111111) |
Date and time of data generation | 13:13, 29 November 2017 |
Horizontal resolution | 600 dpi |
Vertical resolution | 600 dpi |
Software used | Adobe Photoshop Lightroom 5.7 (Windows) |
File change date and time | 17:12, 1 December 2017 |
Exposure Program | Manual |
Exif version | 2.3 |
Date and time of digitizing | 13:13, 29 November 2017 |
APEX shutter speed | 6.491853 |
Metering mode | Average |
Color space | sRGB |
Date metadata was last modified | 20:12, 1 December 2017 |
Unique ID of original document | 761B083550DA24831405ACA50C2E2A67 |
IIM version | 4 |