File:Silicon dislocation orientation 111 mag 500x.png

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Silicon_dislocation_orientation_111_mag_500x.png(768 × 576 pixels, file size: 650 KB, MIME type: image/png)

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Title: Dislocations in Si crystal, orientation 111

  • Desc: Image of dislocations in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of dislocations.
  • Author: Twisp
  • Date: 24.08.2005
Date 13 September 2005 (original upload date)
Source No machine-readable source provided. Own work assumed (based on copyright claims).
Author No machine-readable author provided. Twisp assumed (based on copyright claims).

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Date/TimeThumbnailDimensionsUserComment
current00:15, 13 September 2005Thumbnail for version as of 00:15, 13 September 2005768 × 576 (650 KB)Twisp (talk | contribs)* Title: Dislocations in Si crystal, orientation 111 * Desc: Image of dislocations in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of dislocations. * Autho

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