File:Scheme of n-metal oxide semiconductor field-effect transistor with channel de.svg
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Size of this PNG preview of this SVG file: 625 × 400 pixels. Other resolutions: 320 × 205 pixels | 640 × 410 pixels | 1,024 × 655 pixels | 1,280 × 819 pixels | 2,560 × 1,638 pixels.
Original file (SVG file, nominally 625 × 400 pixels, file size: 27 KB)
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| Description |
English: Lateral cut of a metal oxide semiconductor field-effect transistor with the channel. Coloured, with german descriptions
Deutsch: Eingefärbtes Schema eines n-Kanal w:de:MOSFET. Die Anschlüsse sind:
Mit steigender Spannung zwischen Gate und Bulk bzw. Substrat (hier rot dargestellt) werden dabei zuerst die Majoritätsladungsträger verdrängt und es bildet sich durch Ladungsträger-Verarmung ein nichtleitendes Gebiet. Steigt die Spannung weiter, kommt es zur Inversion, das p-dotierte Substrat wird unterhalb des Gates n-leitend und bildet einen leitenden Kanal zwischen Source und Drain. ('+' bedeutet in dieser Abbildung starke Dotierung.) |
| Date | |
| Source | Own work |
| Author | Arne Nordmann (norro} |
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File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 19:10, 3 May 2006 | | 625 × 400 (27 KB) | Norro (talk | contribs) | small mistake |
| 19:00, 3 May 2006 |  | 625 × 400 (27 KB) | Norro (talk | contribs) | Seems like Batik is not able to render arrows yet, so drew them by myself | |
| 18:56, 3 May 2006 |  | 625 × 400 (27 KB) | Norro (talk | contribs) | revised | |
| 20:09, 2 May 2006 |  | 625 × 525 (30 KB) | Norro (talk | contribs) | improved | |
| 21:31, 1 May 2006 |  | 525 × 438 (29 KB) | Norro (talk | contribs) | improved | |
| 20:53, 1 May 2006 |  | 525 × 438 (28 KB) | Norro (talk | contribs) | added depletion zone | |
| 20:28, 1 May 2006 |  | 563 × 438 (23 KB) | Norro (talk | contribs) | Scheme of n-MOSFET with channel, german descriptions |
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