File:Partially etched silicon dioxide via Nomarski DIC.jpg
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![File:Partially etched silicon dioxide via Nomarski DIC.jpg](https://upload.wikimedia.org/wikipedia/commons/thumb/b/b4/Partially_etched_silicon_dioxide_via_Nomarski_DIC.jpg/800px-Partially_etched_silicon_dioxide_via_Nomarski_DIC.jpg?20090927214856)
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[edit]DescriptionPartially etched silicon dioxide via Nomarski DIC.jpg |
English: The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The oxide should have been fully etched in the horizontal area at the center of the image, but in fact was not - because of a defect in processing. The irregular remaining oxide is highlighted by the Nomarski Differential Interference Contrast microscopy (DIC). |
Date | |
Source | Own work |
Author | Richstraka |
The photo was imaged on color Polaroid® print film.
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 21:48, 27 September 2009 | ![]() | 2,113 × 1,550 (755 KB) | Richstraka~commonswiki (talk | contribs) | {{Information |Description={{en|1=The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The oxide should have been fully etched in the horizontal area at the center of the image, but in fact was not - becau |
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Orientation | Normal |
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Horizontal resolution | 600 dpi |
Vertical resolution | 600 dpi |
Software used | Adobe Photoshop CS4 Macintosh |
File change date and time | 17:38, 27 September 2009 |
Color space | Uncalibrated |