File:Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide (Figure 5).png

English: (5a) Schematic illustration of the proposed p–i–n diode with a graded doping profile in the i-region and the distributions of donors and acceptors. (5b) Maximum rate of photons emitted by the SiC-SF center versus pump current at room temperature for the diode shown in panel (a). Simulations are performed for different values of the radiative lifetime of the excited state of the SiC-SF center which can be significantly decreased using the Purcell effect in nanoantennas. The red curve corresponds to the maximum possible photon emission rate limited by the electron and hole capture processes. Inset: Maximum possible photon emission rate as a function of the position of the color center in the p–i–n diode for different pump currents