File:EUV photoelectrons and secondaries.jpeg

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EUV_photoelectrons_and_secondaries.jpeg ‎(642 × 514 pixels, file size: 27 KB, MIME type: image/jpeg)

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English: Top: EUV multilayer and absorber (purple)constituting mask pattern for imaging a line. Bottom: EUV radiation (red) reflected from the mask pattern is absorbed in the resist (amber) and substrate (brown), producing photoelectrons and secondary electrons (blue). These electrons increase the extent of chemical reactions in the resist, beyond that defined by the original light intensity pattern. As a result, a secondary electron pattern that is random in nature is superimposed on the optical image. The unwanted secondary electron exposure results in loss of resolution, observable line edge roughness and linewidth variation. Refs.: N. Felix et al., Proc. SPIE 9776, 97761O (2016); A. Saeki et al., Nanotech. 17, 1543 (2006); T. Kozawa et al., JVST B 25, 2295 (2007).
Date 13 May 2008 (original upload date)
Source Transferred from en.wikipedia to Commons by User:Cepheiden using CommonsHelper.
Author Guiding light at en.wikipedia
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Guiding light at en.wikipedia, the copyright holder of this work, hereby publishes it under the following licenses:
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The original description page was here. All following user names refer to en.wikipedia.
  • 2008-05-13 06:04 Guiding light 642×514× (27374 bytes) Top: EUV multilayer and absorber (purple)constituting mask pattern for imaging a line. Bottom: EUV radiation (red) reflected from the mask pattern is absorbed in the resist (amber) and substrate (brown), producing photoelectrons and secondary electrons (b

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current15:15, 9 November 2011Thumbnail for version as of 15:15, 9 November 2011642 × 514 (27 KB)File Upload Bot (Magnus Manske) (talk | contribs) {{BotMoveToCommons|en.wikipedia|year={{subst:CURRENTYEAR}}|month={{subst:CURRENTMONTHNAME}}|day={{subst:CURRENTDAY}}}} {{Information |Description={{en|Top: EUV multilayer and absorber (purple)constituting mask pattern for imaging a line. Bottom: EUV radi

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