File:1645RT2U-cell-HD.jpg

English: Individual memory cells of a Milandr 1645RT2U radiation hardened 32k*8 anti-fuse ROM chip. Each cell has an area of 91.8µm². Anti-fuse ROM stores data by dielectric breakdown of thin oxide (17V is required in this case for reliable programming). The green rectangles in this image are access transistors. Below and above these access transistors are red rectangles which are the storage elements. In the center of these storage elements there is an oval area where dielectric is much thinner and dielectric breakdown occurs.