File:П411А die.jpg

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Captions

Captions

П411А (P411A) Germanium PNP transistor die

Summary

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Description
English: П411А (P411A) Coaxial type microwave germanium drift transistor, up to 400 MHz.

The transistor die is mounted on the collector terminal passing through the base of the device. The base is connected to the metal body of the device, and the emitter connection is output through the upper insulator (duplicate outputs of the emitter and base are carried out through the lower base).

Manufactured in former Soviet Union, SVETLANA plant, 1968.
Date
Source Own work
Author Mister rf

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Date/TimeThumbnailDimensionsUserComment
current22:24, 15 January 2023Thumbnail for version as of 22:24, 15 January 20231,669 × 2,048 (1.84 MB)Mister rf (talk | contribs)Uploaded own work with UploadWizard

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